Normally-Off AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier
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概要
- 論文の詳細を見る
The recessed-gate AlGaN/GaN metal--oxide--semiconductor heterostructure field-effect transistors (MOSHFETs) with a p-GaN back-barrier studied in this work exhibited much lower buffer leakage current than those without the back-barrier. The threshold voltage of the device with the p-GaN back-barrier was controlled by varying the depth of gate recess etching, and a value as high as 2.9 V was obtained with deep gate-recess etching into the channel layer. The device structure has the advantage of both low leakage current and high threshold voltage, which is important for power-switching applications. In contrast, the performance parameters of the device, such as subthreshold slope and field-effect mobility, can be degraded owing to increased plasma damage with increasing recess depth.
- 2012-03-25
著者
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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Kim Ki-Won
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Kim Dong-Seok
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Im Ki-Sik
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Kang Hee-Sung
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Mun Jae-Kyoung
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Nam Eun-Soo
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Bae Sung-Bum
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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