Kang Hee-Sung | School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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概要
- Kang Hee-Sungの詳細を見る
- 同名の論文著者
- School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Koreaの論文著者
関連著者
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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Kim Ki-Won
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Kim Dong-Seok
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Im Ki-Sik
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Kang Hee-Sung
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Ha Jong-Bong
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Ha Jong-Bong
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Park Ki-Yeol
Samsung Electro-Mechanics Co., Ltd., Centeral R&D Institute, Suwon 443-743, Korea
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Mun Jae-Kyoung
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Nam Eun-Soo
Convergence Components and Materials Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, Korea
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Bae Sung-Bum
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Park Ki-Yeol
Samsung Electro-Mechanics Co., Ltd., Centeral R&D Institute, Suwon 443-743, Korea
著作論文
- Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing
- Normally-Off AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier