Lee Jung-hee | School Of Electrical Engineering And Computer Science Kyungpook National University

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概要

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著作論文

Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor : Semiconductors
A MSM Photodetector on p-type GaN for UV Image system
Electrical and Optical Properties of an n-Channel GaN Schottky Barrier MISFET
Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon
Dry-Etching Characteristics of Attenuated Phase-Shifting Masks using C1_2/CF_4/O_2/He Plasmas
Preparation of (Ba, Sr)TiO_3 Thin Films with High Pyroelectric Coefficients at Ambient Temperatures
Device Characteristics of AlGaN/GaN MIS-HFET Using Al_2O_3-HfO_2 Laminated High-k Dielectric
Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor
Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers
Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer
Fabrication of a Separation by Implantation of Oxygen Silicon Nano-Gap Using Thin Film Stress
Thermal and Electrical Properties of 5-nm-Thick TaN Film Prepared by Atomic Layer Deposition Using a Pentakis(ethylmethylamino)tantalum Precursor for Copper Metallization
Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing
Normally-Off AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier
Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition
Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain
Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film
Characteristics of Micro-Thermoelectric Mass Flow Sensors with Si3N4/SiO2/Si3N4 Thermal Isolation Membrane

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