Hahm Sung-ho | School Of Electrical Engineering & Computer Science Kyungpook National University

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概要

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著作論文

A MSM Photodetector on p-type GaN for UV Image system
Electrical and Optical Properties of an n-Channel GaN Schottky Barrier MISFET
Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon
Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers
Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor
Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers
Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer
Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition
Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain
Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film
Amphoteric Behavior of Impurities in GaN Film Grown on Si Substrate

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