Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon
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概要
- 論文の詳細を見る
- 2004-09-15
著者
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LEE Jung-Hee
School of Electronic and Electrical Engineering, Kyungpook National University
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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Hahm Sung-ho
School Of Electrical Engineering And Computer Science Kyungpook National University
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Lee Heon-bok
School Of Electrical Engineering And Computer Science Kyungpook National University
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PARK Sung-Jong
School of Electrical and Computer Engineering, Kyungpook National University
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CHOI Yong-Woon
School of Electrical and Computer Engineering, Kyungpook National University
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SHAN Wang
Institute of Materials Research and Engineering
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CHUA Soo-Jin
Institute of Materials Research and Engineering
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Hahm Sung-ho
School Of Electrical Engineering & Computer Science Kyungpook National University
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Park Sung-jong
School Of Electrical And Computer Engineering Kyungpook National University
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Choi Yong-woon
School Of Electrical And Computer Engineering Kyungpook National University
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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