Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor : Semiconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-03-01
著者
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Shin Moo-whan
Department Of Ceramics Engineering Myongji University
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LEE Jung-Hee
School of Electronic and Electrical Engineering, Kyungpook National University
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Lee Jae-seung
School Of Electronic And Electrical Engineering Kyungpook National University:2rf Device Team Lg Ele
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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Oh Jae-eung
School Of Mechanical Engineering Hanyang University
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Jung Doo-chan
Rf Device Team Lg Electronics Institute Of Technology:department Of Ceramics Engineering Myongji Uni
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KIM Jong-Wook
RF Device Team, LG Electronics Institute of Technology
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KIM Chang-Seok
School of Electrical and Computer Engineering, Hanyang University
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LEE Won-Sang
RF Device Team, LG Electronics Institute of Technology
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LEE Jae-Hak
RF Device Team, LG Electronics Institute of Technology
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SHIN Jin-Ho
RF Device Team, LG Electronics Institute of Technology
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Oh Jae-eung
School Of Electrical And Computer Engineering Hanyang University
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Shin Jin-ho
Rf Device Team Lg Electronics Institute Of Technology
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Lee Won-sang
Rf Device Team Lg Electronics Institute Of Technology
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Kim Jong-wook
Rf Device Team Lg Electronics Institute Of Technology
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Kim Chang-seok
School Of Electrical And Computer Engineering Hanyang University
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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