Deep-Level Defects in AlGaN/GaN Heterostructures Grown Using rf-Plasma-Assisted Molecular Beam Epitaxy

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概要

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• Gallium nitride heterostructures sandwiched between AlGaN layers have been grown on sapphire substrates using rf-plasma-assisted molecular-beam epitaxy (MBE), and their electrical properties investigated. Deep-level transient spectroscopy (DLTS) measurements reveal that the activation energies of the two electron levels were 0.21 eV and 0.23 eV relative to the conduction band, with capture cross sections of $5.0\times 10^{-15}$ cm2 and $7.4\times 10^{-17}$ cm2, respectively. From the capture kinetics of the deep-level defects, according to the filling pulse duration and the bias voltage, it is suggested that the 0.21 eV defect is associated with nitrogen vacancies and the 0.23 eV defect is associated with extended defects.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2005-04-15

著者

• Park Chan

  Qsrc And Department Of Physics Dongguk University

• Oh Jae-eung

  School Of Electrical And Computer Engineering Hanyang University

• Kang Tae

  Qsrc And Department Of Physics Dongguk University

• Yoon Im-taek

  Qsrc And Department Of Physics Dongguk University

• PARK Young

  QSRC and Department of Physics, Dongguk University

• LEE Ho

  QSRC and Department of Physics, Dongguk University

• CHO Hoon

  QSRC and Department of Physics, Dongguk University

• Wang Kang

  Electrical Engineering Department Device Research Laboratory University Of California At Los Angeles

• Oh Jae-Eung

  School of Electrical and Computer Engineering, Hanyang University, Ansan 425-781, Korea

• Park Young

  QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea

• Wang Kang

  Electrical Engineering Department, University of California at Los Angeles, Los Angeles, California 90095-1594, U.S.A.

• Park Chan

  QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea

• Yoon Im-Taek

  QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea

• Lee Ho

  QSRC and Department of Physics, Dongguk University, Seoul 100-715, Korea

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