Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006)
スポンサーリンク
概要
- 論文の詳細を見る
High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Roomtemperature electron mobilities of over 15,000cm2/V-s and 20,000cm2/v-s can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
-
Oh Jae-eung
School Of Mechanical Engineering Hanyang University
-
Oh Jae-eung
School Of Electrical And Computer Engineering Hanyang University
-
Kim Moon-Duk
Department of Physics, Choongnam National University
-
Kim Moon-duk
Department Of Physics Choongnam National University
関連論文
- Active Noise Control with the Active Muffler in Automotive Exhaust Systems
- Noise Reduction of the Engine Cooling Fan Used in Large Bus
- The Performance Improvement for an Active Noise Control of an Automotive Intake System under Rapidly Accelerated Conditions
- Pulsed Current-Voltage-Temperature Characteristics of AlGaN/GaN High Electron Mobility Transistor under Isothermal Conditions
- Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor : Semiconductors
- Active Control of Automotive Intake Noise under Rapid Acceleration using the Co-FXLMS Algorithm
- Interior and Exterior Noise Reduction of a Rectangular Enclosure According to the Determination of Suitable Thickness of the Foamed Aluminum Sheet Absorber
- Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006)
- Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006)
- Nonlinear Analysis of Friction Induced Vibrations of a Two-degree-of-freedom Model for Disc Brake Squeal Noise
- Deep-Level Defects in AlGaN/GaN Heterostructures Grown Using rf-Plasma-Assisted Molecular Beam Epitaxy
- Application of Wave-Number Sensing Technique for the Prediction of Radiated Sound in the Structural Acoustic System
- Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates
- Performance Improvement of Active Noise Control by Hybrid Control Method
- Deep-Level Defects in AlGaN/GaN Heterostructures Grown Using rf-Plasma-Assisted Molecular Beam Epitaxy
- Interior Noise Reduction of Enclosure Using Predicted Characteristics of Porous Material