Molecular Beam Epitaxy of InAs/AlSb HFET's on Si and GaAs Substrates(Session 2 Compound Semiconductor Devices I,AWAD2006)
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概要
- 論文の詳細を見る
High electron mobility transistors with InAs channels and antimonide barriers were grown on Si and GaAs substrates by means of molecular beam epitaxy. While direct growth of Sb materials on Si substrate generates disordered and coalescences 3D growth, smooth and mirror-like 2D growth can be repeatedly obtained by inserting AlSb QD layers between them. Room-temperature electron mobilities of over 15,000 cm2/V-s and 20,000 cm2/v-s can be routinely obtained on Si and GaAs substrates, respectively, after optimizing the buffer structure as well as maintaining InSb-like interface.
- 社団法人電子情報通信学会の論文
- 2006-06-26
著者
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Oh Jae-eung
School Of Mechanical Engineering Hanyang University
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Oh Jae-eung
School Of Electrical And Computer Engineering Hanyang University
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Kim Moon-Duk
Department of Physics, Choongnam National University
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Kim Moon-duk
Department Of Physics Choongnam National University
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