Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain

概要

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We investigated the electrical properties and photo-responsive characteristic of enhancement n-channel GaN Schottky barrier metal–insulator–semiconductor field effect transistor (SB-MISFET), which was fabricated on p-GaN grown on silicon substrate. Schottky type source and drain contacts were used to fabricate the enhancement type n-channel GaN MISFET without implantation. The electrical properties of fabricated device with 10 μm gate length and 100 μm width, exhibited a threshold voltage of 2.7 V, the maximum drain current of 1 μA/mm and the maximum transconductance of 0.4 μS/mm at $V_{\text{DS}}=10$ V, and the drain leakage current density of less than 1 nA/mm2. The spectral photo-response characterization exhibits that the cutoff wavelength was 365 nm, and the UV/visible rejection ratio was about 110 near the threshold voltage at $V_{\text{DS}}=5$ V.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-04-30