Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor
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概要
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We proposed a novel narrow metal-filled trench as a source/drain contact structure for a three-dimensional (3D) metal–oxide–semiconductor field effect transistor (MOSFET) with self-aligned dual metal contacts or dual silicide contacts that can be fabricated by a simple process. We demonstrated experimentally that the proposed structure with a 30 nm narrow trench can be etched and filled. From the simulation, we found that the structure has lower sheet resistance and lower gate-to-source/drain parasitic capacitance than a conventional elevated source/drain contact structure, thereby fulfilling the ITRS requirements. This structure may be an alternative solution for source/drain contacts beyond 32 nm technology.
- 2009-04-25
著者
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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Lee Heon-bok
School Of Electrical Engineering And Computer Science Kyungpook National University
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Hahm Sung-ho
School Of Electrical Engineering & Computer Science Kyungpook National University
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Lee Heon-Bok
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Ahn Shi-Hyun
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Hahm Sung-Ho
School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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