Fabrication of a Separation by Implantation of Oxygen Silicon Nano-Gap Using Thin Film Stress

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概要

• 論文の詳細を見る

• We have fabricated and controlled a novel nanometer scale silicon gap in a separation by implantation of oxygen (SIMOX) structure using the thin film stress generated during high temperature annealing and cooling, and then elucidated the formation mechanism and crystal orientation dependency of the gaps. The technique is very simple and controllable in shaping a wedge type nano-structure with a several hundred-nanometer gap. The fabricated structure has a 190 and 250 nm narrow gap with 2 μm and 11 μm side etching of the buried SiO_2, respectively.

• 社団法人応用物理学会の論文
• 1998-12-30

著者

• LEE Jong-Hyun

  School of Electronic and Electrical Engineering, Kyungpook National University

• Lee Jong-hyun

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Lee Jung-hee

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Hahm Sung-ho

  Sensor Technology Research Center Kungpook National University

• PARK Dong-Il

  School of Electronic and Electrical Engineering, Kyungpook National University

• ZANG Woo-Jae

  Sensor Technology Research Center, Kungpook National University

• Park Dong-il

  School Of Electronic And Electrical Engineering Kyungpook National University

• Zang Woo-jae

  Sensor Technology Research Center Kungpook National University

• Lee Jung-Hee

  School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea

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