Characteristics and Modeling of a Nonplanar Nonrectangular Metal Oxide Semiconductor Field Effect Transistor for Charge Sensing in the Si Micro-Fluidic Channel

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概要

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• In this work, a nonplanar, nonrectangular metal-oxide-semiconductor field effect transistor (MOSFET) with an asymmetrical channel structure for sensing charge in the Si micro-fluidic channel was fabricated, and the electrical characteristics of the fabricated three-dimensional (3-D) MOSFET were measured. The device was formed in the convex corner of a Si micro-fluidic channel using tetramethyl ammonium hydroxide (TMAH) anistropic etching solution, so that it would be suitable for combination with a micro-fluidic system. We approximated the nonplanar, nonrectangular 3-D MOSFET to a two-dimensional rectangular structure using the Schwartz-Christoffel transformation. The LEVEL1 device parameters of the 3-D MOSFET were extracted from the measured electrical device characteristics and were used in a simulation program with integrated circuit emphasis (SPICE) simulation. The measured and simulated results for the 3-D MOSFET were compared and found to show good agreement. We also investigated the feasibility of the proposed 3-D MOSFET as a charge sensor for detecting charged biomolecules.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2004-06-15

著者

• Park Hey-jung

  Department Of Sensor Engineering Kyungpook National University

• Lee Jong-hyun

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Shin Jang-kyoo

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Choi Pyung

  School Of Electronic & Electrical Eng. Kyungpook National University

• Lim Geunbae

  Department Of Mechanical Engineering Pohang University Of Science And Technology

• Lee Minho

  School Of Dentistry Chonbuk National University

• Lyu Hong-Kun

  School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea

• Lyu Hong-Kun

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

• Kim Dong-Sun

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

• Kim Dong-Sun

  School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea

• Shin Jang-Kyoo

  School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea

• Lee Minho

  School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea

• Choi Pyung

  School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea

• Lim Geunbae

  Department of Mechanical Engineering, Pohang University of Science and Technology, Pohang 790-784, Korea

• Lee Jong-Hyun

  School of Electronic and Electrical Engineering, Kyungpook National University, Daegu 702-701, Korea

• Park Hey-Jung

  Department of Sensor Engineering, Kyungpook National University, Daegu 702-701, Korea

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