Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel

概要

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As micro-fluidic systems and biochemical detection systems are scaled to smaller dimensions, the realization of small and portable biochemical detection systems has become increasingly important. In this paper, we propose a 3-dimensional structure of a metal oxide semiconductor field-effect transistor(3-D MOSFET) using tetramethyl ammonium hydroxide (TMAH) anisotropic etching, which is a suitable device for combining with a micro-fluidic system. After fabricating a trapezoidal micro-fluidic channel, the 3-D MOSFET embodied in the convex corner of the micro-fluidic channel was fabricated. The length of the gate is about 20 μm and the width is about 9 μm. The depth and top width of the trapezoidal micro-fluidic channel are about 8 μm and 60 μm, respectively. The measured drain saturation current of the 3-D MOSFET was about $-22$ μA at $V_{\text{GS}}=-5$ V and $V_{\text{DS}}=-5$ V, and the device characteristics exhibit a typical MOSFET behavior. Moreover, a gold layer was used for the MOSFET's gate metal to detect charged biochemical samples using the affinity between gold and thiol.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-06-15