Fabrication of Three-Dimensional Cu Coaxial Cable Using Porous Silicon Technology
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概要
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This paper presents the fabrication of a three-dimensional Cu coaxial cable with a thick oxidized porous silicon (OPS) layer for application of microwave and RF integrated circuit technology. The structure was fabricated by hydrofluoric acid, nitric acid, acetic acid (HNA) etching, followed by the OPS process, electroplating and photoresist (PR) reflow. The return loss of the Cu coaxial cable on the OPS layer is $-35.53$ dB at 13 GHz and the insertion loss of Cu coaxial cable on OPS layer is $-0.17$ dB at 5.5 GHz. Therefore, the fabricated devices are expected to improve the characteristic of the insertion loss and the transmission line dispersion. Also, it is possible that the cable can be used as the microsize coaxial cable.
- 2004-06-15
著者
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Lee Jong-hyun
School Of Electrical Engineering And Computer Science Kyungpook National University
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Shin Jang-kyoo
School Of Electrical Engineering And Computer Science Kyungpook National University
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Shin Jang-Kyoo
School of Electronic & Electrical Eng., Kyungpook National University, 1370 Sankyuk-Dong, Buk-Ku, Daegu 702-701, Korea
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Lee Jong-Hyun
School of Electronic & Electrical Eng., Kyungpook National University, 1370 Sankyuk-Dong, Buk-Ku, Daegu 702-701, Korea
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Eun Duk-Soo
School of Electronic & Electrical Eng., Kyungpook National University, 1370 Sankyuk-Dong, Buk-Ku, Daegu 702-701, Korea
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