Characterization of 10μm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application(Semiconductor Materials and Devices)

スポンサーリンク

概要

• 論文の詳細を見る

• This paper proposes a 10μm thick oxide layer structure, which can be used as a substrate for RF circuits The structure has been fabricated by anodic reaction and complex oxidation, which is a combined process of low temperature thermal oxidation (500℃, for 1hr at H_2O/O_2) and a rapid thermal oxidation (RTO) process (1050℃, for 1mm) The electrical characteristics of oxidized porous silicon layer (OPSL) were almost the same as those of standard thermal silicon dioxide The leakage current through the OPSL of 10μm was about 100-500pA in the range of 0V to 50V The average value of breakdown field was about 3.9MV/cm From the X-ray photo-electron spectroscopy (XPS) analysis, surface and internal oxide films of OPSL, prepared by complex process, were confirmed to be completely oxidized Also the role of RTO was important for the densification of the porous silicon layer (PSL), oxidized at a lower temperature For the RF test of Si substrate, with thick silicon dioxide layer, we have fabricated high performance passive devices such as coplanar waveguide (CPW) on OPSL substrate The insertion loss of CPW on OPSL prepared by complex oxidation process was -0.39dB at 4GHz and similar to that of CPW on OPSL prepared at a temperature of 1050℃ (1hr at H_2O/O_2). Also the return loss of CPW on OPSL prepared by complex oxidation process was -23dB at 10GHz which is similar to that of CPW on OPSL prepared by high temperature oxidation.

• 社団法人電子情報通信学会の論文
• 2003-11-01

著者

• Lee J‐h

  School Of Electrical Engineering And Computer Science Kyungpook National University

• LEE Jong-Hyun

  School of Electronic and Electrical Engineering, Kyungpook National University

• PARK Jeong-Yong

  School of Electronic & Electrical Engineering, Kyungpook National University

• Lee Jong-hyun

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Park J‐y

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Park Jeong-yong

  School Of Electrical Engineering And Computer Science Kyungpook National University

関連論文

• Fabrication of Low-Frequency AC-DC Thermal Converter with Thermal Mass
• Detection of Streptavidin-Biotin Protein Complexes Using Three-Dimensional MOSFET in the Si Micro-Fluidic Channel
• Characteristics and Modeling of a Nonplanar Nonrectangular Metal Oxide Semiconductor Field Effect Transistor for Charge Sensing in the Si Micro-Fluidic Channel
• Fabrication of Three-Dimensional Cu Coaxial Cable Using Porous Silicon Technology
• Fabrication of a Microbiochemical Reactor with Thick Thermal Isolation Layer and Integrated Pt Heater/Sensor in the Microwell
• Field Effect Transistor-based Bimolecular Sensor Employing a Pt Reference Electrode for the Detection of Deoxyribonucleic Acid Sequence
• 3.3V 35mW Second-Order Three-Bit Quadrature Band-Pass ΔΣ Modulator for Digital Radio(Analog Signal Processing)
• 3.3V 35mW Second-Order Three-Bit Quadrature Band-Pass △Σ Modulator for Digital Radio
• Fabrication and Characteristics of a Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence
• Fabrication of Thick Silicon Dioxide Air-Bridge for RF Application Using Micromachining Technology
• Characteristics of Piezoresistive Mass Flow Sensors Fabricated by Porous Silicon Micromachining
• Design and Fabrication of a Micro Electro Mechanical Systems-Based Electrolytic Tilt Sensor
• Characterization of 10μm Thick Porous Silicon Dioxide Obtained by Complex Oxidation Process for RF Application(Semiconductor Materials and Devices)
• Fabrication of Cantilever-Bump Type Si Probe Card
• 実験感染犬における犬ジステンパーウイルス早期検出のための組織および体液試料の比較(短報)(内科学)
• Fabrication of a Silicon Micro-Probe for Vertical Probe Card Application
• Design and Fabrication of a Micro Electro Mechanical Systems-Based Electrolytic Tilt Sensor
• Fabrication of Low-Frequency AC-DC Thermal Converter with Thermal Mass
• Fabrication of Three-Dimensional Cu Coaxial Cable Using Porous Silicon Technology
• Fabrication of a Separation by Implantation of Oxygen Silicon Nano-Gap Using Thin Film Stress
• A Piezoresistive Silicon Accelerometer Using Porous Silicon Micromachining and Flip-Chip Bonding
• Fabrication of 3-Dimensional Structure of Metal Oxide Semiconductor Field Effect Transistor Embodied in the Convex Corner of the Silicon Micro-Fluidic Channel
• Fabrication and Characteristics of a Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence
• Characteristics and Modeling of a Nonplanar Nonrectangular Metal Oxide Semiconductor Field Effect Transistor for Charge Sensing in the Si Micro-Fluidic Channel
• Field Effect Transistor-based Bimolecular Sensor Employing a Pt Reference Electrode for the Detection of Deoxyribonucleic Acid Sequence
• Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film
• Fabrication of a Microbiochemical Reactor with Thick Thermal Isolation Layer and Integrated Pt Heater/Sensor in the Microwell
• Fabrication of a Silicon Micro-Probe for Vertical Probe Card Application

もっと見る 閉じる

スポンサーリンク