Fabrication and Characteristics of a Field Effect Transistor-Type Charge Sensor for Detecting Deoxyribonucleic Acid Sequence

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概要

• 論文の詳細を見る

• We have fabricated an field effect transistor (FET)-type deoxyribonucleic acid (DNA) charge sensor which can detect the DNA sequence by sensing the variation of drain current due to DNA hybridization and investigated its electrical characteristics. It is fabricated as a PMOSFET-type because the DNA probe has a negative charge. Au which has a chemical affinity with thiol was used as the gate metal in order to immobilize DNA. The operating principle is very similar to that of MOSFET. The gate potential is determined by the electric charge possessed by the DNA. The variation of the drain current with time was measured. The drain current increased when thiol DNA and target DNA were injected into the solution, because of the field effect due to the electrical charge of DNA molecules. Therefore it is confirmed that the DNA sequence can be detected by measuring the variation of the drain current due to the variation of DNA charge and it is concluded that the proposed FET-type DNA charge sensor might be useful for the implementation of the DNA chip.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2003-06-15

著者

• KIM Dong-Sun

  School of Electronic and Electrical Engineering, Kyungpook National University

• JEONG Yong-Taek

  School of Electronic & Electrical Eng., Kyungpook National University

• PARK Hey-Jung

  Dept. of Sensor Eng., Kyungpook National University

• KIM Hyoung

  School of Electronic & Electrical Eng., Kyungpook National University

• LIM Geunbae

  Bio-Chip Project Team, Samsung Advanced Institute of Technology

• ISHIDA Makoto

  Dept. of Electrical & Electronic Eng., Toyohashi Univ. of Technology

• Lee Jong-hyun

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Shin Jang-kyoo

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Choi Pyung

  School Of Electronic & Electrical Eng. Kyungpook National University

• Lyu Hong-Kun

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

• Kim Dong-Sun

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

• Lim Geunbae

  Bio-Chip Project Team, Samsung Advanced Institute of Technology, Kihung 449-712, Korea

• Lee Jong-Hyun

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

• Ishida Makoto

  Dept. of Electrical & Electronic Eng., Toyohashi Univ. of Technology, Toyohashi 441-8580, Japan

• Jeong Yong-Taek

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

• Kim Hyoung

  School of Electronic & Electrical Eng., Kyungpook National University, Daegu 702-701, Korea

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