Amphoteric Behavior of Impurities in GaN Film Grown on Si Substrate

スポンサーリンク

概要

• 論文の詳細を見る

• Hall measurement presented that an unintentionally doped uniform and crack-free GaN film grown on n-type (111)-oriented Si substrate with high temperature-grown relatively thin AlN single and multiple buffer layer shows p-type conductivity. The position of valence band maximum at the surface of the film measured by the synchrotron radiation photoemission spectroscopy is below Fermi level at 1.09 eV due to band bending at the surface, which is indicative for the p-type nature of the grown film. The n-channel metal–oxide–semiconductor field effect transistor (MOSFET) fabricated on the GaN layer exhibited normally-off mode operation. This cannot be achieved if the GaN layer is not p-type. It is believed that the spatial coordination of auto-doped Si atoms, out-diffused from the substrate, or carbon complexes from metal-organic (MO) precursor favorably occupy the substitutional nitrogen site of the GaN film when the film is under tensile strain during the growth, which clearly explains that the p-type conduction is originated from the stress dependent amphoteric nature of Si atom and/or carbon complex in GaN.

• Japan Society of Applied Physicsの論文
• 2007-05-25

著者

• Lee Heon-bok

  School Of Electrical Engineering And Computer Science Kyungpook National University

• Hahm Sung-ho

  School Of Electrical Engineering & Computer Science Kyungpook National University

• Cho Hyun-ick

  School Of Electrical Engineering & Computer Science Kyungpook National University

• Lee Jung-Hee

  School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea

• Lee Dong-Sik

  School of Electrical Engineering and Computer Science, Kyungpook National University, Daegu 702-701, Korea

関連論文

• Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor : Semiconductors
• A MSM Photodetector on p-type GaN for UV Image system
• Electrical and Optical Properties of an n-Channel GaN Schottky Barrier MISFET
• Characteristics of Pt/Schottky Diode s fabricated on the Cracked GaN Epitaxial Layer on (111) Silicon
• Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers
• Dry-Etching Characteristics of Attenuated Phase-Shifting Masks using C1_2/CF_4/O_2/He Plasmas
• Preparation of (Ba, Sr)TiO_3 Thin Films with High Pyroelectric Coefficients at Ambient Temperatures
• Device Characteristics of AlGaN/GaN MIS-HFET Using Al_2O_3-HfO_2 Laminated High-k Dielectric
• Narrow Metal-Filled Trench as a Source/Drain Contact for Three-Dimensional Metal–Oxide–Semiconductor Field Effect Transistor
• Fabrication of Low-Frequency AC-DC Thermal Converter with Thermal Mass
• Pt/AlGaN Metal Semiconductor Ultra-Violet Photodiodes on Crack-Free AlGaN Layers
• Enhanced Electrical Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistor with p-GaN Back Barriers and Si Delta-Doped Layer
• Fabrication of a Separation by Implantation of Oxygen Silicon Nano-Gap Using Thin Film Stress
• Thermal and Electrical Properties of 5-nm-Thick TaN Film Prepared by Atomic Layer Deposition Using a Pentakis(ethylmethylamino)tantalum Precursor for Copper Metallization
• Performance Enhancement of Normally-Off Plasma-Assisted Atomic Layer Deposited Al2O3/GaN Metal–Oxide–Semiconductor Field-Effect Transistor with Postdeposition Annealing
• Normally-Off AlGaN/GaN Metal--Oxide--Semiconductor Heterostructure Field-Effect Transistor with Recessed Gate and p-GaN Back-Barrier
• Effectiveness of Self-Carbon and Titanium Capping Layers in NiSi formation with Ni Film Deposited by Atomic Layer Deposition
• Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain
• Formation of Low-Resistivity Nickel Silicide with High Temperature Stability from Atomic-Layer-Deposited Nickel Thin Film
• Novel Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal--Oxide--Semiconductor Field-Effect-Transistors Based on Radio-Frequency Analysis
• Characteristics of Micro-Thermoelectric Mass Flow Sensors with Si3N4/SiO2/Si3N4 Thermal Isolation Membrane
• Compound Semiconductor Tunneling Field-Effect Transistor Based on Ge/GaAs Heterojunction with Tunneling-Boost Layer for High-Performance Operation
• Rigorous Design and Analysis of Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric and Tunneling-Boost n-Layer
• Amphoteric Behavior of Impurities in GaN Film Grown on Si Substrate

もっと見る 閉じる

スポンサーリンク