Device Characteristics of AlGaN/GaN MIS-HFET Using Al_2O_3-HfO_2 Laminated High-k Dielectric
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概要
- 論文の詳細を見る
- Japan Society of Applied Physicsの論文
- 2004-11-01
著者
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LEE Jung-Hee
School of Electronic and Electrical Engineering, Kyungpook National University
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Lee Jung-hee
School Of Electrical Engineering And Computer Science Kyungpook National University
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LEE Jong-Lam
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH
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CHO Hyun-Ick
School of Electrical Engineering and Computer Science, Kyungpook National University
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Choi Hyun-chul
School Of Electronic And Electrical Engineering Kyungpook National University
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Lee Chun-soo
Genitech Inc.
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Lee Jong-lam
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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Cho Hyun-ick
School Of Electrical Engineering & Computer Science Kyungpook National University
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PARK Ki-Yeol
School of Electrical Engineering & Computer Science, Kyungpook National University
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BAE Young-Ho
Uiduk University
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Park Ki-yeol
School Of Electrical Engineering & Computer Science Kyungpook National University
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Choi Hyun-Chul
School of Electrical Engineering and Computer Science, Kyungpook National University, 1370 Sankyuk-dong, Buk-gu, Daegu 702-701, Korea
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Lee Jung-Hee
School of Electrical Engineering & Computer Science, Kyungpook National University, Daegu 702-701, Korea
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