Effects of Photowashing Treatment on Gate Leakage Current of GaAs Metal-Semiconductor Field-Effect Transistors
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概要
- 論文の詳細を見る
Effects of photowashing treatment on gate leakage current (I_<GD>) of a GaAs metal-semiconductor field-effect transistor were studied by observing changes in atomic composition and band bending at the surface of GaAs through X-ray photoemission spectroscopy. The photowashing treatment produces Ga_20_3 on the surface of GaAs, leaving acceptor-type Ga antisites behind under the oxide. The Ga antisites played a role in reducing the maximum electric field at the drain edge of the gate, leading to the decrease of I_<GD>. The longer photowashing time produced thicker oxide on the surface of GaAs, acting as a conducting pass for electrons, leading to the increase of I_<GD>.
- 社団法人応用物理学会の論文
- 2002-05-15
著者
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Park Min
Department Of Biological Sciences Graduate School Of Science The University Of Tokyo
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Moon Jae
Compound Semiconductor Department Electronics And Telecommunications Research Institute Daedok Scien
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Choi Kyoung
Department Of Materials Science And Engineering. Pohang University Of Science And Technology Pohang
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Lee Jong-lam
Department Of Materials Science And Engineering. Pohang University Of Science And Technology Pohang
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Lee Jong-lam
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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KIM Haechon
Compound Semiconductor Department, Electronics and Telecommunications Research Institute, Daedok Sci
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Kim Haechon
Compound Semiconductor Department Electronics And Telecommunications Research Institute Daedok Scien
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Park Min
Department Of Biological Science Graduate School Of Science The University Of Tokyo
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Park Min
Department Of Materials Science And Engineering. Pohang University Of Science And Technology Pohang
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Park Min
Department of Applied Sciences, Korea Maritime University, Busan 606-791, Korea
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