AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor using Pd/Ge Ohmic Contact
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概要
- 論文の詳細を見る
Microstructural reactions of a Pd/Ge contact to a AlGaAs/InGaAs pseudomorphic high electron mobility transistor (PHEMT) have been investigated, and the results have been used to interpret the changes of electrical properties of the PHEMT@. In the as-deposited state, a ternary phase of PdxGaAs containing excess Ge atoms is formed at the interface of Pd/GaAs. When the ohmic metals deposited were annealed at 300°C, a PdGe compound was formed and its contact resistivity was decreased to $1.2\times 10^{-7}$ $\Omega{\cdot}\text{cm}^{2}$. This is due to the preferential outdiffusion of Ga atoms to the PdGe during annealing, leaving Ga vacancies behind. Simultaneously, Ge atoms are indiffused to the GaAs and occupy the Ga vacancies, converting the interfacial GaAs layer into n+-GaAs. The low-temperature PdGe ohmic contact allows changing the sequence in the formation of source/drain and gate electrodes in the PHEMT process. The device performance was remarkably improved as the annealing temperature was increased or the contact resistivity was reduced. The PHEMTs with a gate length of 1.1 $\mu$m, annealed at 300°C, exhibit maximum transconductance of 381 mS/mm.
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-03-15
著者
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Lee Byung-teak
Department Of Materials Science And Engineering Chonnam National University
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Kim Yi-tae
Department Of Materials Science And Engineering Pohang University Of Science Of Technology (postech)
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Oh Jung-woo
Department Of Materials Science And Engineering Pohang University Of Science Of Technology (postech)
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Lee Jong-lam
Department Of Materials Science And Engineering Pohang University Of Science And Technology (postech
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Oh Jung-Woo
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
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Lee Jong-Lam
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
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Kim Yi-Tae
Department of Materials Science and Engineering, Pohang University of Science of Technology (POSTECH), Pohang, Kyungbuk 790-784, Korea
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Lee Byung-Teak
Department of Metallugical Engineering, Chonnam National University, Kwangju 500-757, Korea
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