Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Park H‐h

  School Of Electronics Engineering Information And Communications University

• Lee E‐h

  Electronics And Telecommunications Res. Inst. Taejon Kor

• Lee El-hang

  Research Department Electronics And Telecommunication Research Institute

• Park Min

  Department Of Biological Sciences Graduate School Of Science The University Of Tokyo

• Park H‐h

  Yonsei Univ. Seoul Kor

• Lee El-hang

  Research Department Electronics And Telecommunications Research Institute

• Lee El-hang

  Electronics And Telecommunications Research Institute

• PARK Hyo-Hoon

  Electronics and Telecommunications Research Institute

• YOO Byueng-Su

  Electronics and Telecommunications Research Institute

• AHN Byung

  Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology

• Lee El-hang

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• Ahn B

  Korea Advanced Inst. Sci. And Technol. Taejon Kor

• Park M

  Hyundai Microelectronics Co. Ltd. Cheongju Kor

• Lee E‐h

  Research Department Electronics And Telecommunications Research Institute

• Yoo B‐s

  Raycan Co. Ltd.

• Ahn Byung

  Department Of Internal Medicine Hepatology Division Kangnam St. Mary's Hospital College Of Medi

• Park Min

  Department Of Biological Science Graduate School Of Science The University Of Tokyo

• Lee El-Hang

  Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea

• AHN Byung

  Department of Decontamination and Decommissioning, Korea Atomic Energy Research Institute

• Park Min

  Department of Applied Sciences, Korea Maritime University, Busan 606-791, Korea

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