High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes

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概要

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• We studied the laser power dependence of the performance of nonbiased optical bistable devices (NOBDs) which are composed of two identical multiple shallow quantum wells p-i-n-i-p diodes connected in series. Under the illumination of the laser of a wavelength corresponding to that of the exciton absorption, the diode revealed both the maximum photocurrent and the large negative differential resistance in the forward bias region, fulfilling the conditions of the nonbiased optical bistable operation without any external bias voltage. With the laser power up to 2 mW in a circle of 10 µm diameter, the reflectivity change of ∼20% and the contrast ratio of 2:1 were maintained between the on- and off-states of the NOBD. These results ensure that the proposed device is a good candidate for high-speed optical bistable operation using a high power laser.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1998-03-30

著者

• Lee El-hang

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• Kwon O-kyun

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• Ahn Byung-tae

  Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology

• Lee Kyu-seok

  Basic Research Laboratory Electronics And Telecommunications Research Institute

• Lee El-Hang

  Basic Research Laboratory, Electronics and Telecommunications Research Institute, P. O. Box 106, Yusong, Taejon 305-600, Korea

• Ahn Byung-Tae

  Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, Taejon 305-701, Korea

• Lee Kyu-Seok

  Basic Research Laboratory, Electronics and Telecommunications Research Institute, P. O. Box 106, Yusong, Taejon 305-600, Korea

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