Partial Melting of Yttrium-Excess YBa_2Cu_3O_y Superconductors
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-05-15
著者
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Lee E‐h
Electronics And Telecommunications Res. Inst. Taejon Kor
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Lee El-hang
Research Department Electronics And Telecommunication Research Institute
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Lee El-hang
Research Department Electronics And Telecommunications Research Institute
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Lee El-hang
Electronics And Telecommunications Research Institute
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Lee El-hang
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Oh Sang
New Materials Evaluation Center Korea Research Institute Of Standards And Science
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Lee E‐h
Research Department Electronics And Telecommunications Research Institute
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Oh S
Materials & Devices Research Center Samsung Advanced Institute Of Technology
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LEE Eun-Hong
Materials & Devices Research Center, Samsung Advanced Institute of Technology
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OH Seok
Materials & Devices Research Center, Samsung Advanced Institute of Technology
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YOON Seok-Yeol
Materials & Devices Research Center, Samsung Advanced Institute of Technology
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Yoon S‐y
Pkl Choongnam Kor
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Lee El-Hang
Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
関連論文
- Microstructures in Complex Perovskite (Li_Ln_)TiO_3 (Ln = Pr, Nd, Sm)
- Microstructural Changes in (1-x)Nd_TiO_3-xNdAlO_3 System
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Low Threshold Current Density Surface-Emitting Lasers Buried by Amorphous GaAs
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- Formation of (411)A Faceted GaAs Ridges Using Chemical Beam Epitaxy
- Low-Temperature Growth of InGaAs on GaAs(100) by Chemical Beam Epitaxy Using Unprecracked Monoethylarsine, Triethylgallium and Trimethylindium
- Surface Morphology of (NH_4)_2S_x-Treated GaAs (100) Investigated by Scanrning Tunneling Microscopy
- Partial Melting of Yttrium-Excess YBa_2Cu_3O_y Superconductors
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes
- Photoinduced Hole Tunneling in Resonant Tunneling Diodes
- Dynamic Optical Interconnection in Free-Space Switching System
- Formation of Natural InAlAs Vertical Superlattices
- Quantum Interference Effects in an Aharonov-Bohm Ring with a Gate
- Oscillatory Behavior of Nonlocal Electrical Properties in Mesoscopic AlGaAs/GaAs Two-Dimensional Electron Gas Wire Structures
- Anomalous Magnetoresistance near Superconducting Transition Temperature in a Mesoscopic Aluminum Wire
- NaNO_3 Effects on the Superconducting Properties of YBa_2Cu_3O_y
- Effect of Incident Beam Width on Light Transmission Enhancement by Bow-Tie-Shaped Nano-Aperture
- Microstructures in Complex Perovskite (Li1/2Ln1/2)TiO3 (Ln = Pr, Nd, Sm)
- Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
- Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
- High Power Performance of Nonbiased Optical Bistable Devices Using Multiple Shallow Quantum Well p-i-n-i-p Diodes