Growth of (411)A Faceted GaAs/AlGaAs Ridges by Growth-interrupted Chemical Beam Epitaxy
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概要
- 論文の詳細を見る
Faceted (411) and (100) ridges of GaAs/AlGaAs have been successfully grown on mesa-etched GaAs(100) substrates by chemical beam epitaxy employing growth-interruption technique. The growth-interruption method was found to be very efficient in evolving and forming (411) faceted ridge structures. The formation of (411) ridge structures were attributed to the Ga migration enhanced by growth-interruption and also to the increased desorption of Ga on the (411) face compared to (100) face. We also observed the growth of triangular-shaped GaAs structure with (411)-(100) planes which are surrounded by AlGaAs barrier layer. This results shows that the formation of quantum wires could be possible using this method.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Lee El-hang
Research Department Electronics And Telecommunication Research Institute
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Lee El-hang
Research Department Electronics And Telecommunications Research Institute
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Lee El-hang
Electronics And Telecommunications Research Institute
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Park Seong-ju
Department Of Materials Science And Engineering And Center For Optoelectronic Materials Research Kwa
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KIM Sung-Bock
Research Department, Electronics and Telecommunications Research Institute
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Lee E‐h
Research Department Electronics And Telecommunications Research Institute
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Ro Jeong-rae
Research Department Electronics And Telecommunications Research Institute
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Park Seong-Ju
Department of Materials Science and Engineering, Kwangju Institute of Science and Technology,
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Lee El-Hang
Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Kim Sung-Bock
Research Department, Electronics and Telecommunications Research Institute,
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Ro Jeong-Rae
Research Department, Electronics and Telecommunications Research Institute,
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