Low-Threshold-Current and Single-Mode Surface-Emitting Laser Buried in Amorphous GaAs
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概要
- 論文の詳細を見る
We propose a vertical-cavity surface-emitting laser buried in low-temperature-grown amorphous GaAs (a-GaAs), which was found to be effective for surface passivation of an etched cavity and suppression of high-order transverse modes. The deposition of highly resistive a-GaAs layer on an InGaAs/GaAs active region and AlAs/GaAs mirror layers yielded a significant improvement in threshold current density and differential quantum efficiency. The maximum currents maintaining a stable fundamental transverse mode were also increased by the antiguide effect of a-GaAs with a high refractive index. For a 10-µm-diameter device, we attained a stable single-mode emission with a threshold current of 0.7 mA.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Lee El-hang
Research Department Electronics And Telecommunication Research Institute
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Lee El-hang
Research Department Electronics And Telecommunications Research Institute
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Lee El-hang
Electronics And Telecommunications Research Institute
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PARK Hyo-Hoon
Electronics and Telecommunications Research Institute
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YOO Byueng-Su
Electronics and Telecommunications Research Institute
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CHU Hye
Electronics and Telecommunications Research Institute
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Lee E‐h
Research Department Electronics And Telecommunications Research Institute
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Ahn Byung
Department Of Internal Medicine Hepatology Division Kangnam St. Mary's Hospital College Of Medi
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Park Min
Department Of Biological Science Graduate School Of Science The University Of Tokyo
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Lee El-Hang
Optics and Photonics Elite Research Academy (OPERA), School of Information and Communication Engineering, Inha University, 253 Yonghyun-dong, Nam-gu, Incheon 402-751, Korea
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Park Min
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology,
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Chu Hye
Electronics and Telecommunications Research Institute, P.O.Box 106, Yusong, Taejon 305-600, Korea
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Ahn Byung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology,
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Yoo Byueng-Su
Electronics and Telecommunications Research Institute, P.O.Box 106, Yusong, Taejon 305-600, Korea
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AHN Byung
Department of Decontamination and Decommissioning, Korea Atomic Energy Research Institute
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Park Min
Department of Applied Sciences, Korea Maritime University, Busan 606-791, Korea
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