Characterization of Low-Temperature Stress Hump in Relation to Phase Formation Sequence of Nickel Silicide
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概要
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The stress hump phenomenon observed at a low temperature of approximately 140°C during in situ stress-temperature measurement of sputtered Ni thin film on a (001) Si substrate has been investigated. We found that the stress hump was not related to the formation of NiSi2, but originated from the thickening of an amorphous Ni–Si intermixing layer in the temperature range of 100–140°C followed by the formation of the Ni2Si phase at temperatures above 140°C.
- 2005-01-15
著者
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Byun Jeong
Applied Materials Inc.
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Ahn Byung
Department Of Internal Medicine Hepatology Division Kangnam St. Mary's Hospital College Of Medi
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Hong Jeong
Department Of Applied Mathematics Korea Maritime University
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Kim Sun
Department Of Animal Science And Technology Seoul National University
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Ahn Byung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
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Byun Jeong
Applied Materials Inc., 3050 Bowers Avenue, P.O. Box 58039, Santa Clara, CA 95054-3299, USA
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Hong Jeong
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1Guseong-dong, Yuseong-gu, Daejon 305-701, Korea
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AHN Byung
Department of Decontamination and Decommissioning, Korea Atomic Energy Research Institute
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