The Subbands and Resonant Tunneling of a Two-Dimensional Electron Gas in a HgCdTe Metal-Insulator-Semiconductor Structure

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Electron tunneling spectroscopy was performed at 77 and 4.2 K for the measurement of the tunneling current as a function of the bias voltage, which provided the information on the subbands and resonant tunneling of a two-dimensional electron gas confined in an $n$-type HgCdTe accumulation layer in the Hg1-xCdxTe–ZnS–In junction structure. Our analysis of the tunneling current versus applied bias measured at 77 K indicates that the subband energy level in a Hg0.79Cd0.21Te accumulation layer of a HgCdTe metal-insulator-semiconductor (MIS) structure is located at $-59$ meV for the ground state and ${-}13$ meV for the first excited state relative to the Fermi level. In addition, negative differential resistance was observed for the Hg0.79Cd0.21Te at 4.2 K when the applied bias was larger than the difference between the work function of Indium and the electron affinity of ZnS@. Our calculation based on transfer matrix method suggests that this negative conductance be attributed to Fowler-Nordheim tunneling induced by adjusting the transmission width of a ZnS barrier.
Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
2001-04-15