A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics : Semiconductors

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2001-09-15

著者

• Moon S

  Seoul National Univ. Seoul Kor

• Sung Man

  Korea University

• Sung Man

  Departmnent Of Electrical Engineering Korea University

• Sung Man

  Department Of Electrical Engineering Korea University

• MOON Seung

  Department of Physics, Seoul National University

• Moon S

  Sungkyunkwan Univ. Suwon Kor

• Moon Seung

  Department Of Physics Seoul National University

• KANG Ey

  Department of Electrical Engineering, Korea University

• Kang Ey

  Departmnent Of Electrical Engineering Korea University

• Sung Man

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

• Seung Ey

  Departmnent of Electrical Engineering, Korea University

• Moon Seung

  Department of Electrical Engineering, Korea University, Seoul 136-701, Korea

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