Publisher's Note: ``A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit''

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概要

• 論文の詳細を見る
• 2012-07-25

著者

• KANG Ey

  Department of Electrical Engineering, Korea University

• Sung Man

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

• Moon Seung

  Department of Electrical Engineering, Korea University, Seoul 136-701, Korea

関連論文

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• Publisher's Note: ``The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate''
• Publisher's Note: ``A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics''
• Publisher's Note: ``A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit''
• Publisher's Note: ``A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics''
• The Subbands and Resonant Tunneling of a Two-Dimensional Electron Gas in a HgCdTe Metal-Insulator-Semiconductor Structure
• The Characteristics of Kink Effect Suppressed Thin Film Transistor by Using Symmetric Dual-Gate
• Temperature-Dependent Gate Effect of Sintered HgTe Nanoparticles
• A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics

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