KANG Ey | Department of Electrical Engineering, Korea University

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概要

• 同名の論文著者
• Department of Electrical Engineering, Korea Universityの論文著者

関連著者

• KANG Ey

  Department of Electrical Engineering, Korea University

• Sung Man

  Department of Electrical Engineering and Institute for Nano Science, Korea University, Seoul 136-701, Korea

• Moon Seung

  Department of Electrical Engineering, Korea University, Seoul 136-701, Korea

• Moon S

  Seoul National Univ. Seoul Kor

• Sung Man

  Korea University

• Sung Man

  Departmnent Of Electrical Engineering Korea University

• Sung Man

  Department Of Electrical Engineering Korea University

• MOON Seung

  Department of Physics, Seoul National University

• Kim Dae

  Department Of Anatomy And Center For Advanced Medical Education By Bk21 Project Inha University Coll

• Moon S

  Sungkyunkwan Univ. Suwon Kor

• Moon Seung

  Department Of Physics Seoul National University

• Kang Ey

  Departmnent Of Electrical Engineering Korea University

• KIM Sang

  Department of Anesthesiology and Pain Medicine, Chosun University Medical School

• Kang Ey

  Department of Electronic Engineering, Far East University 5-Wangjang-li, gamgok-Myun, Uemsung-Kun, Chung Cheong-bukdo, Korea

• Sung Man

  Department of Electrical Engineering, Korea University, 1, 5-Ka Anam-dong, Sungbuk-ku, Seoul 136-701, Korea

• Seung Ey

  Departmnent of Electrical Engineering, Korea University

• Kang Ey

  Department of Electronic Engineering, Far East University, Eumseong, Chungbuk, Korea

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著作論文

• A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit : Semiconductors
• A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics : Semiconductors
• Publisher's Note: ``A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics''
• Publisher's Note: ``A Latch-up Immunized Lateral Trench Insulated Gate Bipolar Transistor with a p+ Diverter Structure for Smart Power Integrated Circuit''
• Publisher's Note: ``A Small-Sized Lateral Trench Electrode Insulated Gate Bipolar Transistor for Improving Latch-up and Breakdown Characteristics''
• A New Lateral Trench Electrode Insulated Gate Bipolar Transistor with p+ Diverter for Superior Electrical Characteristics

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