Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2002-09-15
著者
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Moon S
Seoul National Univ. Seoul Kor
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MOON Sang
School of Chemical Engineering, Seoul National University
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Lee G‐r
Seoul National Univ. Seoul Kor
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HWANG Sung-Wook
School of Chemical Engineering and Institute of Chemical Processes, Seoul National University
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LEE Gyeo-Re
School of Chemical Engineering and Institute of Chemical Processes, Seoul National University
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MIN Jae-Ho
School of Chemical Engineering and Institute of Chemical Processes, Seoul National University
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KIM Yu
Memory R&D Division, Hynix Semiconductor Inc.
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RYU Hyun-Kyu
Memory R&D Division, Hynix Semiconductor Inc.
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CHO Yun
Memory R&D Division, Hynix Semiconductor Inc.
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KIM Jin
Memory R&D Division, Hynix Semiconductor Inc.
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Ryu Hyun-kyu
Memory R&d Division Hynix Semiconductor Inc.
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Min Jae-ho
School Of Chemical Engineering And Institute Of Chemical Processes Seoul National University
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Lee Gyeo-re
School Of Chemical Engineering And Institute Of Chemical Processes Seoul National University
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Hwang Sung-wook
School Of Chemical Engineering And Institute Of Chemical Processes Seoul National University
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Kim J
Memory R&d Division Hynix Semiconductor Inc.
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Moon Sang
School Of Chemical Engineering And Institute Of Chemical Processes Seoul National University
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Kim Y
Sun Moon Univ. Chung‐nam Kor
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Kim Jin
Memory R&d Division Hynix Semiconductor Inc.
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Cho Yun
Memory R&d Division Hynix Semiconductor Inc.
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Kim Yu
Memory R&d Division Hynix Semiconductor Inc.
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Kim Jin
Memory Division Samsung Electronics Corporation
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Moon Sang
School of Chemical and Biological Engineering, Seoul National University, San 56-1, Shillim-dong, Kwanak-ku, Seoul 151-744, Korea
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- Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma
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