Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-12-15
著者
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory Research And Development Division Hynix Semiconductor Incorporation
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KIM Jin
Memory R&D Division, Hynix Semiconductor Inc.
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KIM Jun
Memory R&D Division, Hyundai Electronics Industries, Co., Ltd.
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SUN Ho-Jung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Sohn Hyun
Memory Research And Development Division Hynix Semiconductor Incorporation
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LEE Joo-Wan
Memory Research and Development Division, Hynix Semiconductor, Incorporation
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KIM Soo-Hyun
Memory Research and Development Division, Hynix Semiconductor, Incorporation
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Kim Jun
Memory Research And Development Division Hynix Semiconductor Incorporation
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Incorporation
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