Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-04-30
著者
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Cho Heung-jae
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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LEE Jung-Ho
Memory R&D Division, Hynix Semiconductor Inc.
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Oh Jae-geun
Memory R&d Division Hynix Semiconductor Inc.
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Jang S‐a
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hyundai Electronics Ind. Co. Ltd.
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Kim Yang
Department Of Material Science And Engineering Kaist
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Lee Jung-ho
Memory R&d Division Hynix Semiconductor Inc.
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KIM Yong
Memory R&D Division, Hynix Semiconductor Inc.
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SOHN Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc.
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HONG Byung-Seop
Memory R&D Division, Hynix Semiconductor Inc.
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Hong Byung-seop
Memory R&d Division Hynix Semiconductor Inc.
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Sohn H‐c
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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Lee J‐h
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
R&d Division Hynix Semiconductor Inc.
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