Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO_2/PZT/Pt/IrO_2 Capacitor

スポンサーリンク

概要

論文の詳細を見る
1999-09-20

著者

関連論文

Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
Back-end Integration of Pt/BST/Pt Capacitor for ULSI DRAM Applications
Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP
Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Atomic Layer Deposition - and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta_2O_5 and Al_2O_3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond
Effects of Tegaserod on Ileal Peristalsis of Guinea Pig In Vitro
Fabrication and Electrical Characterization of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Ultralarge-Scale Integrated Dynamic Random Access Memory Applications
Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
TaO_xN_y Gate Dielectric with Improved Thermal Stability
A Fast Finite Field Multiplier Architecture for High-Security Elliptic Curve Cryptosystems
Innovative Al Damascene Process for Nanoscale Interconnects
Optimum TiSi_2 Ohmic Contact Process for Sub-100nm Devices
Influence of La_Sr_CoO_3 Heterostructure Electrodes on Pb(Zr, Ti)O_3 Thin Film Properties
Effect of SiO_2 Film Deposition on the Ferroelectric Properties of a Pt/Pb(Zr,Ti)O_3/Pt Capacitor
Effect of ECR CVD SiO_2 Film Deposition of Ferroelectric Properties of Pt/PZT/Pt Capacitor
Low Damage In Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO_2/PZT/Pt/IrO_2 Capacitor
Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
Deposition and Electrical Characterization of Very Thin SrTiO_3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
Electrical Characterizations of Pt/(Ba,Sr)TiO_3/Pt Planar Capacitors for ULSI DRAM Applications
Effects of Si Addition and Heating Ar on the Electromigration Performance of Al-Alloy Interconnects
Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta_2O_5 and Al_2O_3 MIS Capacitor for 0.13μm Technology and Beyond
Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Innovative Al Damascene Process for Nanoscale Interconnects
Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation

もっと見る

スポンサーリンク