Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
スポンサーリンク
概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
-
Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
-
Yeo I‐s
Hynix Semiconductor Inc. Kyoungki Kor
-
Yeo In-seok
Memory R&d Division Hyundai Electronics Industries Co.ltd.
-
Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
-
Park Dae-gyu
Memory R&d Division Hynix Semiconductor Inc.
-
Roh Jae-sung
Memory Research And Development Division Hynix Semiconductor Inc.
-
Roh Jae-sung
Memory R&d Division Hynix Semiconductor Inc.
-
LEE Jeong-Youb
Memory R&D Division, Hynix Semiconductor Inc.
-
LEE Jung-Ho
Memory R&D Division, Hynix Semiconductor Inc.
-
Lee J‐h
Memory R&d Division Hynix Semiconductor Inc.
-
Lee Jeong-youb
Memory R&d Division Hynix Semiconductor Inc.
-
Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
関連論文
- Platinum Hillocks in Pt/Ti Film Stacks Deposited on Thermally Oxidized Si Substrate : Semiconductors
- Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
- Characteristics of TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
- A Novel Comb-Type Differential Pressure Sensor with Silicon Beams Embedded in a Silicone Rubber Membrane
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
- Stacked Pt/SrBi_2Ta_Nb_xO_9/Pt/IrO_x/Ir Capacitor on Poly Plug(Semiconductors)
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
- Thermal Stability and Electrical Properties of SrBi_2TaNb_XO_9/IrO_x Capacitors With Pt Top Electrode : Semiconductors
- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Investigation of Ruthenium Electrodes for (Ba, Sr)TiO_3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- A Process Integration of (Ba, Sr) TiO_3 Capacitor into 256M DRAM
- Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
- Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
- Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
- Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Fabrication of Micro Probe Beam Using MEMS Technology for New Vertical Silicon Probe Card
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
- TaO_xN_y Gate Dielectric with Improved Thermal Stability
- Leakage Current Characteristics of (Ba,Sr) TiO_3 Thin Films Deposited on Ru Electrodes Prepared by Metal Organic Chemical Vapor Deposition
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH_3 Gas as Ru Oxidation Suppressing Agent
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
- Electrical and Structural Properties of Nanolaminate (Al_2O_3/ZrO_2/Al_2O_3) for Metal Oxide Semiconductor Gate Dielectric Applications
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium
- Effects of Encapsulating Barrier Layer on Ferroelectric Properties of Ir/IrO_2/PZT/Pt/IrO_2 Capacitor
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
- Deposition and Electrical Characterization of Very Thin SrTiO_3 Films for Ultra Large Scale Integrated Dynamic Random Access Memory Application
- Electrical Characterizations of Pt/(Ba,Sr)TiO_3/Pt Planar Capacitors for ULSI DRAM Applications
- Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
- Experimental Verification of Autoalignment for Focusing Unit of Near Field Recording System: Neural Network Approach (Special Issue: Optical Memories)
- Thickness Minimized Magnetic Circuit for Rotary-Type Voice Coil Motor
- A Neural Network Approach Based on Interference Pattern Analysis : Application to an Autoalignment Method for the Focusing Unit of NFR System
- Multisegmented Magnet Array on Voice Coil Motor in Rotating Data Storage Devices
- The Space Charge Effect on the Discharge Current in Cross-Linked Polyethylene under High AC Voltages
- Impacts of Self-Aligned Epitaxial Silicon Sliver(SESS)in Buried Channel-pFETs Elevated Source/Drain Using Dual-Spacer Structure
- Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
- Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH3 Gas as Ru Oxidation Suppressing Agent
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium