Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_<4-x>La_xTi_3O_<12> (BLT) Thin Film

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Dependence of Switching Characteristics on Fabrication Process and Capacitor Size for Pt/SBT/Pt Ferroelectric Capacitor
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Ferroelectric Performance of Fully Integrated(Bi, La)_4Ti_3O_ Capacitor for Ferroelectric Memory
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Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
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Ferroelectric Memories using Randomly Oriented (Bi_La_x)_4Ti_3O_ Films
Thickness Effects on Physical and Ferroelectric Properties of Bi_La_Ti_3O_ (BLT) Films with c-axis-Preferred and Random Orientations
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Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
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Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium

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