Roh Jae-sung | Memory R&d Division Hynix Semiconductor Inc.
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概要
関連著者
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Roh Jae-sung
Memory R&d Division Hynix Semiconductor Inc.
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh J
Memory Research And Development Division Hynix Semiconductor Inc.
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Kweon Soon
Memory R&d Division Hynix Semiconductor Inc.
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Yeom S
Memory Research And Development Division Hynix Semiconductor Inc.
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Yeom S
Hynix Semiconductor Inc. Kyoungki‐do Kor
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KWEON Soon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Yeom Seung
Memory R&d Division Hynix Semiconductor Inc.
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YEOM Seung
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Kim Nam
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yeom Seung
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Nam
Memory Product And Technology Division Samsung Electronics
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Kweon Soon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim N
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Kim Nam
Memory R&d Division Hynix Semiconductor Inc.
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Inc.
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Choi E
Memory Research And Development Division Hynix Semiconductor Inc.
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ROH Jae
Memory Research and Development Division, HYUNDAI Electronics Industries Co., Ltd.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh Jae-sung
Memory Research And Development Division Hynix Semiconductor Inc.
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CHOI Eun
Memory Research and Development Division, Hynix Semiconductor Inc.
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Roh Jae
Memory R & D Division Hynix Semiconductor Inc.
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Choi Eun
Memory R&d Division Hynix Semiconductor Inc.
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Yang Woo
Memory Research and Development Division, Hyundai Electronics Industries Co., Ltd.
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Yang W
Hynix Semiconductor Inc. Kyoungki‐do Kor
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SUN Ho-Jung
Memory Research and Development Division, Hynix Semiconductor Inc.
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Kim Younsoo
Memory Research And Development Division Hynix Semiconductor Inc.
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Yang Woo
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Jong-min
Memory Research And Development Division Hynix Semiconductor Inc.
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SOHN Hyun-Chul
Memory R&D Division, Hynix Semiconductor Inc.
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Sohn H‐c
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Incorporation
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Park Dae-gyu
Memory R&d Division Hynix Semiconductor Inc.
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Yang Jun-mo
Memory R&d Division Hynix Semiconductor Inc.
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KIM Jin
Memory R&D Division, Hynix Semiconductor Inc.
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Cho Kwang-jun
Memory Research And Development Division Hynix Semiconductor Inc.
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LEE Tae
Memory Research and Development Division, Hynix Semiconductor Inc.
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HONG Tae
Memory Research and Development Division, Hynix Semiconductor Inc.
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KIM Younsoo
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Ki-seon
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Lee Jeong-youb
Memory R&d Division Hynix Semiconductor Inc.
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Sun H‐j
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Kyong-min
Memory R & D Division Hynix Semiconductor Inc.
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Kim Jin
Memory Division Samsung Electronics Corporation
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KWEON Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science andTechnology
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Yeo I‐s
Hynix Semiconductor Inc. Kyoungki Kor
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Yeo In-seok
Memory R&d Division Hyundai Electronics Industries Co.ltd.
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Park Young
Feram Team Memory R&d Division Hynix Semiconductor Incorporated
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Park Y
Hynix Semiconductor Incorporated Kyoungki‐do Kor
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LEE Jeong-Youb
Memory R&D Division, Hynix Semiconductor Inc.
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LEE Jung-Ho
Memory R&D Division, Hynix Semiconductor Inc.
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PARK Young
Memory Research and Development Division, Hynix Semiconductor Inc.
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CHOl Si
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology
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YEON Seng
Memory R&D Division, Hyundai Electrontics Industries Co., Ltd.
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Hong Kwon
Memory Research And Development Division Hynix Semiconductor Inc.
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Choi S
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Yeo In-seok
Memory R&d Division Hynix Semiconductor Inc.
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Kim Kyong-min
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim Kyong-min
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Jung-ho
Memory R&d Division Hynix Semiconductor Inc.
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Park Young
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Jin
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Jin
Memory R&d Division Hynix Semiconductor Inc.
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Lee J‐h
Memory R&d Division Hynix Semiconductor Inc.
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SONG Han-Sang
Memory Research and Development Division, Hynix Semiconductor Inc.
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PARK Ki-Seon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Ki-seon
Memory Research And Development Division Hynix Semiconductor Inc.
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Song Han-sang
Memory R & D Division Hynix Semiconductor Inc.
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Choi Si
Department Of Materials Science And Engineering Korea Advanced Institute Of Science And Technology
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Kim Y
Memory Research And Development Division Hynix Semiconductor Inc.
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Park Sung-eon
Memory Research And Development Division Hynix Semiconductor Inc.
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Sohn Hyun-chul
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Jin
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Yang Jun-Mo
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Lee Jeong-Youb
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Yeom Seung
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Roh Jae-Sung
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Lee Jung-Ho
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Roh Jae-Sung
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Yeo In-Seok
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Park Sung-Eon
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Park Dae-Gyu
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Kim Younsoo
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Kweon Soon
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Hong Kwon
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Nam
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Hong Tae
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Icheon-si, Kyoungki-do 467-701, Korea
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Lee Jong-Min
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea
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Roh Jae-Sung
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea
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Cho Kwang-Jun
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea
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Kweon Soon
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology, 373-1 Kusung-dong, Yusung-gu, Taejon 305-701, Korea
著作論文
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Ohmic Contact Properties of Tungsten Plug and Ferroelectric Properties of (Bi,La)_4Ti_3O_ Thin Film in Stacked Capacitor Structure
- Electrical Properties of Bi_LaxTi_3O_ Ferroelectric Thin Films Prepared by Metalorganic Decomposition Method
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_Thin Film : Electrical Properties of Condensed Matter
- Effects of Bottom Electrodes (Pt and IrO_2) on Physical and Electrical Properties of Bi_La_xTi_3O_ (BLT) Thin Film
- Thermal Stability and Electrical Properties of SrBi_2TaNb_XO_9/IrO_x Capacitors With Pt Top Electrode : Semiconductors
- Effects of Crystallization Annealing Sequence for SrBi_2Ta_2O_9(SBT)Film on Pt/SBT Interface Morphology and Electrical Properties of Ferroelectric Capacitor
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium
- Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH3 Gas as Ru Oxidation Suppressing Agent
- Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
- Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
- Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium