Cho Kwang-jun | Memory Research And Development Division Hynix Semiconductor Inc.
スポンサーリンク
概要
関連著者
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Roh Jae-sung
Memory R&d Division Hynix Semiconductor Inc.
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Cho Kwang-jun
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Jong-min
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Younsoo
Memory Research And Development Division Hynix Semiconductor Inc.
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Park Ki-seon
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Sun Ho-jung
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Kyong-min
Memory R & D Division Hynix Semiconductor Inc.
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Roh Jae-sung
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Kyong-min
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim Kyong-min
Memory Research And Development Division Hynix Semiconductor Inc.
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SUN Ho-Jung
Memory Research and Development Division, Hynix Semiconductor Inc.
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KIM Younsoo
Memory Research and Development Division, Hynix Semiconductor Inc.
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PARK Ki-Seon
Memory Research and Development Division, Hynix Semiconductor Inc.
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Park Ki-seon
Memory Research And Development Division Hynix Semiconductor Inc.
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Kim Y
Memory Research And Development Division Hynix Semiconductor Inc.
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Lee Jong-Min
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea
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Roh Jae-Sung
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea
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Cho Kwang-Jun
Memory Research and Development Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eup, Ichon-si, Kyoungki-do 476-701, Korea
著作論文
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium
- Oxidation Characteristics of TiN Film as a Barrier Metal for Bottom-Electrode Ru Film Fabricated from Tris-(2,4-octanedionato)ruthenium