Kim Jin | Memory Division Samsung Electronics Corporation

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著作論文

Etch Characteristics of Silsesquioxane-based Low Dielectric Constant Material in Fluorocarbon Plasma
Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
An Area-Efficient, Low-VDD, Highly Reliable Multi-Cell Antifuse System Fully Operative in DRAMs
Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process

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