Sung Min | Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
スポンサーリンク
概要
- Sung Min Gyuの詳細を見る
- 同名の論文著者
- Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Koreaの論文著者
関連著者
-
Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
-
Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
-
Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
-
Jang Se-aug
Memory R&d Division Hynix Semiconductor Inc.
-
Kim Tae-yoon
Memory R&d Division Hynix Semiconductor Inc.
-
Kim Yong
Memory R&d Division Hynix Semiconductor Inc.
-
Sung Min
Memory R&d Division Hynix Semiconductor Inc.
-
Lee Seung
Memory R&d Division Hynix Semiconductor Inc.
-
Kim Jin
Memory Division Samsung Electronics Corporation
-
Sung Min
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Pyi Seung-ho
Memory R&d Div. Hyundai Electronics Ind. Co. Ltd.
-
Ku Ja-Chun
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Lim Kwan-Yong
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Lee Ju-Hee
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Cho Heung-Jae
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Joo Moon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Pyi Seung-Ho
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Jang Se-Aug
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Joo Moon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Kim Tae-Yoon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Yang Hong-Seon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
-
Kim Jin
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
著作論文
- Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
- Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices