Cho Heung-Jae | Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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概要
- Cho Heung-Jaeの詳細を見る
- 同名の論文著者
- Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Koreaの論文著者
関連著者
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Cho Heung-jae
Memory R&d Division Hynix Semiconductor Inc.
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Lim Kwan-yong
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
Memory R&d Division Hynix Semiconductor Inc.
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Kim Yong
Memory R&d Division Hynix Semiconductor Inc.
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Cho Heung-Jae
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Oh Jae-geun
Memory R&d Division Hynix Semiconductor Inc.
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Kim Tae-yoon
Memory R&d Division Hynix Semiconductor Inc.
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Lee Jung-ho
Memory R&d Division Hynix Semiconductor Inc.
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Hong Byung-seop
Memory R&d Division Hynix Semiconductor Inc.
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Sohn Hyun-chul
Memory R&d Division Hynix Semiconductor Inc.
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Sung Min
Memory R&d Division Hynix Semiconductor Inc.
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Lee Seung
Memory R&d Division Hynix Semiconductor Inc.
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Kim Jin
Memory Division Samsung Electronics Corporation
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Ku Ja-Chun
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Lim Kwan-Yong
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Jang Se-Aug
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Kim Tae-Yoon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Hong Byung-Seop
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Yang Hong-Seon
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Kim Jin
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
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Sung Min
Memory R&D Division, Hynix Semiconductor Inc., Ichon P.O. Box 1010, Ichon-si, Kyoungki-do 467-701, Korea
著作論文
- Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
- Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation