Sohn Hyun-chul | Memory R&d Division Hynix Semiconductor Inc.

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著作論文

Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr, Ti)O_3 Thin Films on Structural Stabilities of Hybrid Pt/IrO_2/Ir Stack and Single-Layer Ir Bottom Electrodes
Preparation of Silicon-on-Insulator Wafer Using Spin Etching and a Subsequent Selective Etching Process
Preparation of Platinum Thin Films by Metalorganic Chemical Vapor Deposition Using Oxygen-Assisted Decomposition of (Ethylcyclopentadienyl)trimethylplatinum
Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition
Pb(Zr_xTi_)O_3 Thin Film Fabricated on Heterogeneous Under-Layer of Pt and SiO_2 in High Density Ferroelectric Random Access Memory (FeRAM) Capacitor
Fabrication of Highly Dense Ru Thin Films by High-Temperature Metal-Organic Chemical Vapor Deposition with NH3 Gas as Ru Oxidation Suppressing Agent
Effects of High-Temperature Metal-Organic Chemical Vapor Deposition of Pb(Zr,Ti)O3 Thin Films on Structural Stabilities of Hybrid Pt/IrO2/Ir Stack and Single-Layer Ir Bottom Electrodes
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Properties of Ru Thin Films Fabricated on TiN by Metal-Organic Chemical Vapor Deposition

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