Lim Kwan-yong | Memory R&d Division Hynix Semiconductor Inc.

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著作論文

Suppressed Boron Penetration in p^+ poly-Si/Al_2O_3/Si Metal-Oxide-Semiconductor System by Remote Plasma Nitridation of Al_2O_3 Surface
Physical and Electrical Characteristics of Poly-Si/ZrO_2/SiO_2/Si MOS Structures
Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation
Diffusion Barrier Characteristics of TiSix/TiN for Tungsten Dual Poly Gate in DRAM
Degradation of Nitride/W/WN_x/Poly-Si Gate Stack by Post-Thermal Processes
Effect of Post Thermal Processes on Nitride/W/WN_x/poly-Si Gate Stack
Impact of In Situ NH_3 Preannealing on Sub-100nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
Gate Oxide Reliability Characterization of Tungsten Polymetal Gate with Low-Contact-Resistive WSix/WN Diffusion Barrier in Memory Devices
Roles of Ti, TiN, and WN as an Interdiffusion Barrier for Tungsten Dual Polygate Stack in Memory Devices
Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
Characteristics of Multiple Thickness Gate Oxides Using Oxidation Enhancement by Si Implantation

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