YANG Hong-Seon | R&D Division, Hynix Semiconductor Inc.

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices
Incorporation Effect of Thin Al2O3 Layers on ZrO2–Al2O3 Nanolaminates in a Composite Oxide–High-$\kappa$-Oxide Stack for Floating-Gate Flash Memory Devices

スポンサーリンク