Kim Jin | R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
スポンサーリンク
概要
- 同名の論文著者
- R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Koreaの論文著者
関連著者
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YANG Hong-Seon
R&D Division, Hynix Semiconductor Inc.
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Kim Jin
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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CHO Heung-Jae
R&D Division, Hynix Semiconductor Inc.
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JANG Se-Aug
R&D Division, Hynix Semiconductor Inc.
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LEE Seung
R&D Division, Hynix Semiconductor Inc.
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LIM Kwan-Yong
R&D Division, Hynix Semiconductor Inc.
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SUNG Min
R&D Division, Hynix Semiconductor Inc.
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JOO Moon
R&D Division, Hynix Semiconductor Inc.
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HONG Kwon
R&D Division, Hynix Semiconductor Inc.
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KOO Jaehyoung
R&D Division, Hynix Semiconductor Inc.
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KIM Jaemun
R&D Division, Hynix Semiconductor Inc.
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SHIN Seungwoo
R&D Division, Hynix Semiconductor Inc.
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KIM Myungok
R&D Division, Hynix Semiconductor Inc.
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PYI Seungho
R&D Division, Hynix Semiconductor Inc.
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KWAK Nojung
R&D Division, Hynix Semiconductor Inc.
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Cho Heung-Jae
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Joo Moon
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Lim Kwan-Yong
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Jang Se-Aug
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Jang Se
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Kim Jaemun
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Yang Hong-Seon
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Yang Hong-Seon
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Kim Yong-Soo
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Hwang Yun
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Jang Se
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Ku Ja
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Hong Kwon
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Lee Seung
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Jin
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Yong-Soo
R&D Division, Hynix Semiconductor Inc., Ichon P. O. Box 1010, Ichon, Kyoungki-do 467-701, Korea
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Shin Seungwoo
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
著作論文
- Dependence of Gate Interfacial Resistance on the Formation of Insulative Boron–Nitride for p-Channel Metal–Oxide–Semiconductor Field-Effect Transistor in Tungsten Dual Polygate Memory Devices
- Incorporation Effect of Thin Al2O3 Layers on ZrO2–Al2O3 Nanolaminates in a Composite Oxide–High-$\kappa$-Oxide Stack for Floating-Gate Flash Memory Devices