JANG Se-Aug | R&D Division, Hynix Semiconductor Inc.

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Effect of Gate Oxide Thickness Uniformity on the Characteristics of Three-dimensional Transistors
The incorporation effect of thin Al_2O_3 layers on ZrO_2-Al_2O_3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices
Incorporation Effect of Thin Al2O3 Layers on ZrO2–Al2O3 Nanolaminates in a Composite Oxide–High-$\kappa$-Oxide Stack for Floating-Gate Flash Memory Devices

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