Incorporation Effect of Thin Al2O3 Layers on ZrO2–Al2O3 Nanolaminates in a Composite Oxide–High-$\kappa$-Oxide Stack for Floating-Gate Flash Memory Devices
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概要
- 論文の詳細を見る
We demonstrate the electrical properties and reliability of ZrO2–Al2O3 nanolaminates as high-$\kappa$ dielectric materials in a composite oxide–high-$\kappa$-oxide (OKO) stack for floating-gate flash memory devices with 40 nm technology nodes and beyond. The effects of incorporating thin Al2O3 layers into ZrO2 films as an inserting layer and a capping layer on the electrical properties and reliability are discussed. The incorporation of Al2O3 layers significantly improves the leakage current versus the capacitive-equivalent thickness (CET) and TDDB characteristics of the ZrO2–Al2O3 nanolaminate compared with those of the pure ZrO2 owing to the mismatch of the grain boundaries, improved resistance to silicon diffusion, and enhanced energetic-electron hardness of the high-$\kappa$ film.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-04-30
著者
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JANG Se-Aug
R&D Division, Hynix Semiconductor Inc.
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LEE Seung
R&D Division, Hynix Semiconductor Inc.
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YANG Hong-Seon
R&D Division, Hynix Semiconductor Inc.
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JOO Moon
R&D Division, Hynix Semiconductor Inc.
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HONG Kwon
R&D Division, Hynix Semiconductor Inc.
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KOO Jaehyoung
R&D Division, Hynix Semiconductor Inc.
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KIM Jaemun
R&D Division, Hynix Semiconductor Inc.
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SHIN Seungwoo
R&D Division, Hynix Semiconductor Inc.
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KIM Myungok
R&D Division, Hynix Semiconductor Inc.
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PYI Seungho
R&D Division, Hynix Semiconductor Inc.
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KWAK Nojung
R&D Division, Hynix Semiconductor Inc.
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Joo Moon
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Jin
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Jang Se-Aug
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Jaemun
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Yang Hong-Seon
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Hong Kwon
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Lee Seung
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Kim Jin
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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Shin Seungwoo
R&D Division, Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Kyoungki-do 467-701, Korea
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- Incorporation Effect of Thin Al2O3 Layers on ZrO2–Al2O3 Nanolaminates in a Composite Oxide–High-$\kappa$-Oxide Stack for Floating-Gate Flash Memory Devices