The incorporation effect of thin Al_2O_3 layers on ZrO_2-Al_2O_3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Kim Jin-woong
Memory R&d Division Hynix Semiconductor Inc.
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Yang Hong-seon
Memory R&d Division Hynix Semiconductor Inc.
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Jang S‐a
Memory R&d Division Hynix Semiconductor Inc.
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JANG Se-Aug
R&D Division, Hynix Semiconductor Inc.
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LEE Seung
R&D Division, Hynix Semiconductor Inc.
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KIM Jin-Woong
R&D Division, Hynix Semiconductor Inc.
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Joo Moon
R&d Division Hynix Semiconductor Inc.
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Kim Jin-woong
R&d Division Hynix Semiconductor Inc.
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JOO Moon
R&D Division, Hynix Semiconductor Inc.
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YANG Hongseon
R&D Division, Hynix Semiconductor Inc.
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HONG Kwon
R&D Division, Hynix Semiconductor Inc.
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KOO Jaehyoung
R&D Division, Hynix Semiconductor Inc.
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KIM Jaemun
R&D Division, Hynix Semiconductor Inc.
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SHIN Seungwoo
R&D Division, Hynix Semiconductor Inc.
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KIM Myungok
R&D Division, Hynix Semiconductor Inc.
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PYI Seungho
R&D Division, Hynix Semiconductor Inc.
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KWAK Nojung
R&D Division, Hynix Semiconductor Inc.
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Pyi Seungho
R&d Division Hynix Semiconductor Inc.
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Kim Jaemun
R&d Division Hynix Semiconductor Inc.
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Kim Myungok
R&d Division Hynix Semiconductor Inc.
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Kwak Nojung
R&d Division Hynix Semiconductor Inc.
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Jang Se-aug
R&d Division Hynix Semiconductor Inc.
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Shin Seungwoo
R&d Division Hynix Semiconductor Inc.
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Koo Jaehyoung
R&d Division Hynix Semiconductor Inc.
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Hong Kwon
R&d Division Hynix Semiconductor Inc.
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Lee Seung
Memory R&d Division Hynix Semiconductor Inc.
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- The incorporation effect of thin Al_2O_3 layers on ZrO_2-Al_2O_3 nanolaminates in the composite oxide-high-K-oxide stack for the floating gate flash memory devices
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- Effect of Selective Oxidation Conditions on Defect Generation in Gate Oxide
- Physical and Electrical Characteristics of Physical Vapor-Deposited Tungsten for Bit Line Process
- Impact of In Situ NH3 Preannealing on Sub-100 nm Tungsten Polymetal Gate Electrode during the Sealing Nitride Formation
- Incorporation Effect of Thin Al2O3 Layers on ZrO2–Al2O3 Nanolaminates in a Composite Oxide–High-$\kappa$-Oxide Stack for Floating-Gate Flash Memory Devices