ED2000-50 / SDM2000-50 Oxidation Behaviors of Ti-Polycide Gate Stack During Gate Re-oxidation
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概要
- 論文の詳細を見る
We examined oxidation behaviors at sidewall of TiSi_2 / polysilicon gate stack at temperatures of 700-850℃. Oxidation at above 800℃ caused an abnormally enhanced oxidation of TiSi_2-sidewall, which was not observed in unpatterned TiSi_2 / polysilicon stack, regardless of oxidation ambient. High-resolution transmission electron microscopy study showed that SiO_2-TiO_2 mixture was produced as a result of the enhanced oxidation of TiSi_2 film, indicating Ti-oxidation more dominantly occurred during the oxidation. This unexpected result was attributed to the structural aspect, i.e., simultaneous exposure of TiSi_2 and polysilicon during oxidation. LDD structured TiSi_2 / polysilicon gate was successfully fabricated using gate re-oxidation at 750℃ without degradation of sheet resistance.
- 社団法人電子情報通信学会の論文
- 2000-06-21
著者
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Yeo In-seok
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Yang Jun-mo
Memory R&d Division Hynix Semiconductor Inc.
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Roh J‐s
Hynix Semiconductor Inc. Kyoungki‐do Kor
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Roh Jae-sung
Advanced Process-capacitor Memory Research & Development Division Hyundai Electronics Industries
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Yeo I‐s
Advanced Process Team Memory R&d Division Hyundai Electronics Industries Co. Ltd.
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Jang S‐a
Memory R&d Division Hynix Semiconductor Inc.
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Park Tae-su
Memory R&d Division Hynix Semiconductor Inc.
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Kim Tae-kyun
Occupational Safety And Health Research Institute Korea Occupational Safety And Health Agency
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Kim Tae-kyun
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang J‐m
Hyundai Microelectronics Co. Cheongju Kor
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Hwang Jeong-mo
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Hwang Jeong-mo
R&d Division Lg Semicon Co. Ltd.
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Hwang Jeong-mo
R&d Division Hyundai Microelectronics Co.
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Jang Se-Aug
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Yang Jun-Mo
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Park Tae-Su
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Roh Jae-Sung
HYUNDAI Electronics Industries Co. Ltd., Memory R&D Division
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Hwang Jeong-mo
Advan. Tech. Lab. Lg Semicon Co. Ltd.
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Hwang J.-m.
Hyundai Electronics Industries Co.ltd. Memory R&d Division
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Roh J‐s
Memory Research And Development Division Hynix Semiconductor Inc.
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Jang Se-aug
R&d Division Hynix Semiconductor Inc.
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